NJV4030PT1G PNP Transistor

The NJV4030PT1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NJV4030PT1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NJV4030PT1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NJV4030PT1G transistor as follows.

NJV4030PT1G Transistor Specification

Transistor Code		NJV4030PT1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT223
Transistor SMD Code		4030P
Collector Power Dissipation (Maximum)	PC	2W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	160MHz
Collector Capacitance	CC	40pF

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