NJD35N04 NPN Transistor

The NJD35N04 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NJD35N04 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NJD35N04 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NJD35N04 transistor as follows.

NJD35N04 Transistor Specification

Transistor Code		NJD35N04
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		DPAK
Collector Power Dissipation (Maximum)	PC	45W
Collector-Base Voltage (Maximum)	VCB	700V
Collector-Emitter Voltage (Maximum)	VCE	350V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		2000
Transition Frequency	FT	90MHz
Collector Capacitance	CC	60pF

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