The NESG3032M14 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NESG3032M14 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The NESG3032M14 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.
Circuit diagram symbol of the NESG3032M14 transistor as follows.
| Transistor Code | NESG3032M14 | |
|---|---|---|
| Transistor Type | BJT | |
| Transistor Polarity | NPN | |
| Transistor Material | ||
| Package | M14 | |
| Transistor SMD Code | zN | |
| Collector Power Dissipation (Maximum) | PC | 0.15W |
| Collector-Base Voltage (Maximum) | VCB | 12V |
| Collector-Emitter Voltage (Maximum) | VCE | 4.3V |
| Collector Current (Maximum) | IC | 0.035A |
| Operating Junction Temperature (Maximum) | TJ | 150°C |
| Emitter-Base Voltage (Maximum) | VEB | 1.5V |
| Forward Current Transfer Ratio (hFE Value) | 220 | |
| Transition Frequency | FT | 23000MHz |
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