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NESG2046M33 NPN Transistor

The NESG2046M33 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NESG2046M33 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NESG2046M33 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NESG2046M33 transistor as follows.

Circuit diagram symbol of the NESG2046M33 transistor

NESG2046M33 Transistor Specification

Transistor Code NESG2046M33
Transistor Type BJT
Transistor Polarity NPN
Transistor Material
Package M33
Transistor SMD Code T7
Collector Power Dissipation (Maximum) PC 0.13W
Collector-Base Voltage (Maximum) VCB 13V
Collector-Emitter Voltage (Maximum) VCE 5V
Collector Current (Maximum) IC 0.04A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 1.5V
Forward Current Transfer Ratio (hFE Value) 140
Transition Frequency FT 15000MHz

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More Transistors Datasheets in M33 Package

NESG2107M33 NESG2107M33 NPN Transistor