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NE68000 NPN Transistor

The NE68000 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NE68000 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NE68000 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NE68000 transistor as follows.

Circuit diagram symbol of the NE68000 transistor

NE68000 Transistor Specification

Transistor Code NE68000
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package CHIP
Collector Power Dissipation (Maximum) PC 0.4W
Collector-Base Voltage (Maximum) VCB 20V
Collector-Emitter Voltage (Maximum) VCE 10V
Collector Current (Maximum) IC 0.035A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 1.5V
Forward Current Transfer Ratio (hFE Value) 50
Transition Frequency FT 10000MHz

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