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NE02112 NPN Transistor

The NE02112 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NE02112 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NE02112 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NE02112 transistor as follows.

Circuit diagram symbol of the NE02112 transistor

NE02112 Transistor Specification

Transistor Code NE02112
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO206AF
Collector Power Dissipation (Maximum) PC 0.7W
Collector-Base Voltage (Maximum) VCB 25V
Collector-Emitter Voltage (Maximum) VCE 12V
Collector Current (Maximum) IC 0.07A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 3V
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 4500MHz
Collector Capacitance CC 0.6pF

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More Transistors Datasheets in TO206AF Package