NB212HG NPN Transistor

The NB212HG is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NB212HG transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NB212HG transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NB212HG transistor as follows.

NB212HG Transistor Specification

Transistor Code		NB212HG
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.6W
Collector-Base Voltage (Maximum)	VCB	55V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		68
Transition Frequency	FT	50MHz
Collector Capacitance	CC	7pF

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