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NB211H NPN Transistor

The NB211H is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NB211H transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NB211H transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NB211H transistor as follows.

Circuit diagram symbol of the NB211H transistor

NB211H Transistor Specification

Transistor Code NB211H
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 0.6W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 30V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 30
Transition Frequency FT 50MHz
Collector Capacitance CC 4pF

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