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NB123EI PNP Transistor

The NB123EI is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NB123EI transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NB123EI transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NB123EI transistor as follows.

Circuit diagram symbol of the NB123EI transistor

NB123EI Transistor Specification

Transistor Code NB123EI
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 0.6W
Collector-Base Voltage (Maximum) VCB 70V
Collector-Emitter Voltage (Maximum) VCE 65V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 140
Transition Frequency FT 100MHz
Collector Capacitance CC 4pF

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