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NB122E PNP Transistor

The NB122E is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the NB122E transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NB122E transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the NB122E transistor as follows.

Circuit diagram symbol of the NB122E transistor

NB122E Transistor Specification

Transistor Code NB122E
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 0.6W
Collector-Base Voltage (Maximum) VCB 55V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 50
Transition Frequency FT 100MHz
Collector Capacitance CC 4pF

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