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NB113FI NPN Transistor

The NB113FI is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NB113FI transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NB113FI transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NB113FI transistor as follows.

Circuit diagram symbol of the NB113FI transistor

NB113FI Transistor Specification

Transistor Code NB113FI
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 0.6W
Collector-Base Voltage (Maximum) VCB 70V
Collector-Emitter Voltage (Maximum) VCE 65V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 140
Transition Frequency FT 100MHz
Collector Capacitance CC 4pF

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