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NB112HJ NPN Transistor

The NB112HJ is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NB112HJ transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NB112HJ transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NB112HJ transistor as follows.

Circuit diagram symbol of the NB112HJ transistor

NB112HJ Transistor Specification

Transistor Code NB112HJ
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 0.6W
Collector-Base Voltage (Maximum) VCB 55V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 200
Transition Frequency FT 100MHz
Collector Capacitance CC 4pF

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