NB112E NPN Transistor

The NB112E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NB112E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NB112E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NB112E transistor as follows.

NB112E Transistor Specification

Transistor Code		NB112E
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.6W
Collector-Base Voltage (Maximum)	VCB	55V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		50
Transition Frequency	FT	100MHz
Collector Capacitance	CC	4pF

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