NB011EV NPN Transistor

The NB011EV is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NB011EV transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NB011EV transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NB011EV transistor as follows.

NB011EV Transistor Specification

Transistor Code		NB011EV
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.6W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	35V
Collector Current (Maximum)	IC	0.03A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		450
Transition Frequency	FT	50MHz
Collector Capacitance	CC	2pF

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