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NB011EV NPN Transistor

The NB011EV is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NB011EV transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NB011EV transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NB011EV transistor as follows.

Circuit diagram symbol of the NB011EV transistor

NB011EV Transistor Specification

Transistor Code NB011EV
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 0.6W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 35V
Collector Current (Maximum) IC 0.03A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 450
Transition Frequency FT 50MHz
Collector Capacitance CC 2pF

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