NA51W NPN Transistor

The NA51W is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NA51W transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NA51W transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NA51W transistor as follows.

NA51W Transistor Specification

Transistor Code		NA51W
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	30W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	45V
Collector Current (Maximum)	IC	3.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		30
Collector Capacitance	CC	70pF

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