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NA31XI NPN Transistor

The NA31XI is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NA31XI transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NA31XI transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NA31XI transistor as follows.

Circuit diagram symbol of the NA31XI transistor

NA31XI Transistor Specification

Transistor Code NA31XI
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO237
Collector Power Dissipation (Maximum) PC 0.75W
Collector-Base Voltage (Maximum) VCB 35V
Collector-Emitter Voltage (Maximum) VCE 30V
Collector Current (Maximum) IC 2A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 140
Transition Frequency FT 20MHz
Collector Capacitance CC 20pF

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