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NA11EH NPN Transistor

The NA11EH is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NA11EH transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NA11EH transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NA11EH transistor as follows.

Circuit diagram symbol of the NA11EH transistor

NA11EH Transistor Specification

Transistor Code NA11EH
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 0.6W
Collector-Base Voltage (Maximum) VCB 25V
Collector-Emitter Voltage (Maximum) VCE 20V
Collector Current (Maximum) IC 1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 100
Transition Frequency FT 50MHz
Collector Capacitance CC 7pF

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