MSD602-RT1 NPN Transistor

The MSD602-RT1 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MSD602-RT1 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MSD602-RT1 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MSD602-RT1 transistor as follows.

MSD602-RT1 Transistor Specification

Transistor Code		MSD602-RT1
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT346
Transistor SMD Code		WRx
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	180MHz
Collector Capacitance	CC	15pF

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