MSD601-RT1G NPN Transistor

The MSD601-RT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MSD601-RT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MSD601-RT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MSD601-RT1G transistor as follows.

MSD601-RT1G Transistor Specification

Transistor Code		MSD601-RT1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT346
Transistor SMD Code		YR
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		210

UXPython is not the creator or an official representative of the MSD601-RT1G NPN transistor. You can download the official MSD601-RT1G NPN transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in SOT346 Package

2PD601AQ NPN Transistor 2PD601AR NPN Transistor 2PD601AS NPN Transistor 2SA1037AKFRA PNP Transistor 2SA1514KFRA PNP Transistor 2SB1695KFRA PNP Transistor 2SC2412KFRA NPN Transistor 2SC3906KFRA NPN Transistor MSA1162GT1G PNP Transistor MSB92T1G PNP Transistor MSC2712GT1G NPN Transistor MSD601-R NPN Transistor MSD602-RT1 NPN Transistor MSD602-RT1G NPN Transistor