The MSD601-RT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MSD601-RT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The MSD601-RT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.
Circuit diagram symbol of the MSD601-RT1G transistor as follows.
Transistor Code | MSD601-RT1G | |
---|---|---|
Transistor Type | BJT | |
Transistor Polarity | NPN | |
Transistor Material | Silicon(SI) | |
Package | SOT346 | |
Transistor SMD Code | YR | |
Collector Power Dissipation (Maximum) | PC | 0.2W |
Collector-Base Voltage (Maximum) | VCB | 60V |
Collector-Emitter Voltage (Maximum) | VCE | 50V |
Collector Current (Maximum) | IC | 0.1A |
Operating Junction Temperature (Maximum) | TJ | 150°C |
Emitter-Base Voltage (Maximum) | VEB | 7V |
Forward Current Transfer Ratio (hFE Value) | 210 |
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