MSC2712GT1G NPN Transistor

The MSC2712GT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MSC2712GT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MSC2712GT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MSC2712GT1G transistor as follows.

MSC2712GT1G Transistor Specification

Transistor Code		MSC2712GT1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT346
Transistor SMD Code		12M_12Y
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		200
Transition Frequency	FT	50MHz

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