MSA1162GT1G PNP Transistor

The MSA1162GT1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MSA1162GT1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MSA1162GT1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MSA1162GT1G transistor as follows.

MSA1162GT1G Transistor Specification

Transistor Code		MSA1162GT1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT346
Transistor SMD Code		62G
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		200
Transition Frequency	FT	80MHz

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