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MS1226 NPN Transistor

The MS1226 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MS1226 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MS1226 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MS1226 transistor as follows.

Circuit diagram symbol of the MS1226 transistor

MS1226 Transistor Specification

Transistor Code MS1226
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package M113
Collector Power Dissipation (Maximum) PC 80W
Collector-Base Voltage (Maximum) VCB 65V
Collector-Emitter Voltage (Maximum) VCE 36V
Collector Current (Maximum) IC 4.5A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 4V
Forward Current Transfer Ratio (hFE Value) 10
Transition Frequency FT 30MHz
Collector Capacitance CC 65pF

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