MS1226 NPN Transistor

The MS1226 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MS1226 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MS1226 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MS1226 transistor as follows.

MS1226 Transistor Specification

Transistor Code		MS1226
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		M113
Collector Power Dissipation (Maximum)	PC	80W
Collector-Base Voltage (Maximum)	VCB	65V
Collector-Emitter Voltage (Maximum)	VCE	36V
Collector Current (Maximum)	IC	4.5A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	30MHz
Collector Capacitance	CC	65pF

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