MRF857S NPN Transistor

The MRF857S is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MRF857S transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MRF857S transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MRF857S transistor as follows.

MRF857S Transistor Specification

Transistor Code		MRF857S
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO50
Collector Power Dissipation (Maximum)	PC	17W
Collector-Base Voltage (Maximum)	VCB	55V
Collector-Emitter Voltage (Maximum)	VCE	30V
Collector Current (Maximum)	IC	0.3A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	960MHz
Collector Capacitance	CC	3.3pF

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