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MRF652S NPN Transistor

The MRF652S is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MRF652S transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MRF652S transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MRF652S transistor as follows.

Circuit diagram symbol of the MRF652S transistor

MRF652S Transistor Specification

Transistor Code MRF652S
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package 244-04
Collector Power Dissipation (Maximum) PC 25W
Collector-Base Voltage (Maximum) VCB 36V
Collector-Emitter Voltage (Maximum) VCE 16V
Collector Current (Maximum) IC 2A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 4V
Forward Current Transfer Ratio (hFE Value) 10
Transition Frequency FT 512MHz
Collector Capacitance CC 9.5pF

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