MRF581A NPN Transistor

The MRF581A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MRF581A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MRF581A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MRF581A transistor as follows.

MRF581A Transistor Specification

Transistor Code		MRF581A
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO50
Collector Power Dissipation (Maximum)	PC	2.5W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	15V
Collector Current (Maximum)	IC	0.2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	2.5V
Forward Current Transfer Ratio (hFE Value)		90
Transition Frequency	FT	1000MHz
Collector Capacitance	CC	2pF

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