MRF5711LT1 NPN Transistor

The MRF5711LT1 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MRF5711LT1 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MRF5711LT1 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MRF5711LT1 transistor as follows.

MRF5711LT1 Transistor Specification

Transistor Code		MRF5711LT1
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT143
Collector Power Dissipation (Maximum)	PC	0.58W
Collector-Base Voltage (Maximum)	VCB	20V
Collector-Emitter Voltage (Maximum)	VCE	10V
Collector Current (Maximum)	IC	0.08A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	3V
Forward Current Transfer Ratio (hFE Value)		50
Transition Frequency	FT	6000MHz
Collector Capacitance	CC	0.4pF

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