MRF412 NPN Transistor

The MRF412 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MRF412 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MRF412 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MRF412 transistor as follows.

MRF412 Transistor Specification

Transistor Code		MRF412
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT121
Collector Power Dissipation (Maximum)	PC	240W
Collector-Base Voltage (Maximum)	VCB	35V
Collector-Emitter Voltage (Maximum)	VCE	18V
Collector Current (Maximum)	IC	18A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		50
Transition Frequency	FT	30MHz
Collector Capacitance	CC	450pF

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