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MRF1150MB NPN Transistor

The MRF1150MB is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MRF1150MB transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MRF1150MB transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MRF1150MB transistor as follows.

Circuit diagram symbol of the MRF1150MB transistor

MRF1150MB Transistor Specification

Transistor Code MRF1150MB
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package 332A-03
Collector Power Dissipation (Maximum) PC 583W
Collector-Base Voltage (Maximum) VCB 70V
Collector-Emitter Voltage (Maximum) VCE 70V
Collector Current (Maximum) IC 12A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 4V
Forward Current Transfer Ratio (hFE Value) 10
Transition Frequency FT 1215MHz
Collector Capacitance CC 25pF

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More Transistors Datasheets in 332A-03 Package

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