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MRF1015MB NPN Transistor

The MRF1015MB is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MRF1015MB transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MRF1015MB transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MRF1015MB transistor as follows.

Circuit diagram symbol of the MRF1015MB transistor

MRF1015MB Transistor Specification

Transistor Code MRF1015MB
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package 332A-03
Collector Power Dissipation (Maximum) PC 17.5W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 60V
Collector Current (Maximum) IC 1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 4V
Forward Current Transfer Ratio (hFE Value) 10
Transition Frequency FT 1100MHz
Collector Capacitance CC 5pF

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More Transistors Datasheets in 332A-03 Package

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