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MRF10150 NPN Transistor

The MRF10150 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MRF10150 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MRF10150 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MRF10150 transistor as follows.

Circuit diagram symbol of the MRF10150 transistor

MRF10150 Transistor Specification

Transistor Code MRF10150
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package 376B-02
Collector Power Dissipation (Maximum) PC 700W
Collector-Base Voltage (Maximum) VCB 65V
Collector-Emitter Voltage (Maximum) VCE 65V
Collector Current (Maximum) IC 14A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 3.5V
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 1150MHz

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More Transistors Datasheets in 376B-02 Package