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MRF1004MB NPN Transistor

The MRF1004MB is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MRF1004MB transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MRF1004MB transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MRF1004MB transistor as follows.

Circuit diagram symbol of the MRF1004MB transistor

MRF1004MB Transistor Specification

Transistor Code MRF1004MB
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package 332A-03
Collector Power Dissipation (Maximum) PC 7W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 20V
Collector Current (Maximum) IC 0.25A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 3.5V
Forward Current Transfer Ratio (hFE Value) 10
Transition Frequency FT 1250MHz
Collector Capacitance CC 3.3pF

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More Transistors Datasheets in 332A-03 Package

MRF1002MB MRF1002MB NPN Transistor MRF1015MB MRF1015MB NPN Transistor MRF10031 MRF10031 NPN Transistor MRF1090MB MRF1090MB NPN Transistor MRF1150MB MRF1150MB NPN Transistor MRF1000MB MRF1000MB NPN Transistor MRF1002MA MRF1002MA NPN Transistor