MRF1002MB NPN Transistor

The MRF1002MB is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MRF1002MB transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MRF1002MB transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MRF1002MB transistor as follows.

MRF1002MB Transistor Specification

Transistor Code		MRF1002MB
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		332A-03
Collector Power Dissipation (Maximum)	PC	7W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	20V
Collector Current (Maximum)	IC	0.25A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	3.5V
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	1100MHz
Collector Capacitance	CC	2.5pF

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More Transistors Datasheets in 332A-03 Package

MRF1000MB NPN Transistor MRF1002MA NPN Transistor MRF1090MB NPN Transistor MRF1004MB NPN Transistor MRF10031 NPN Transistor MRF1150MB NPN Transistor MRF1015MB NPN Transistor