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MRF1002MA NPN Transistor

The MRF1002MA is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MRF1002MA transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MRF1002MA transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MRF1002MA transistor as follows.

Circuit diagram symbol of the MRF1002MA transistor

MRF1002MA Transistor Specification

Transistor Code MRF1002MA
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package 332A-03
Collector Power Dissipation (Maximum) PC 7W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 20V
Collector Current (Maximum) IC 0.25A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 3.5V
Forward Current Transfer Ratio (hFE Value) 10
Transition Frequency FT 1100MHz
Collector Capacitance CC 2.5pF

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More Transistors Datasheets in 332A-03 Package

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