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MRA1000-14L NPN Transistor

The MRA1000-14L is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MRA1000-14L transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MRA1000-14L transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MRA1000-14L transistor as follows.

Circuit diagram symbol of the MRA1000-14L transistor

MRA1000-14L Transistor Specification

Transistor Code MRA1000-14L
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO128
Collector Power Dissipation (Maximum) PC 14W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 28V
Collector Current (Maximum) IC 0.02A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 3.5V
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 1000MHz
Collector Capacitance CC 50pF

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