MPSW45G NPN Transistor

The MPSW45G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MPSW45G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MPSW45G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MPSW45G transistor as follows.

MPSW45G Transistor Specification

Transistor Code		MPSW45G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	1W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	12V
Forward Current Transfer Ratio (hFE Value)		25000
Transition Frequency	FT	100MHz
Collector Capacitance	CC	6pF

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