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MPSW45AZL1G NPN Transistor

The MPSW45AZL1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MPSW45AZL1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MPSW45AZL1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MPSW45AZL1G transistor as follows.

Circuit diagram symbol of the MPSW45AZL1G transistor

MPSW45AZL1G Transistor Specification

Transistor Code MPSW45AZL1G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 1W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 12V
Forward Current Transfer Ratio (hFE Value) 25000
Transition Frequency FT 100MHz
Collector Capacitance CC 6pF

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