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MPSH30 NPN Transistor

The MPSH30 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MPSH30 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MPSH30 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MPSH30 transistor as follows.

Circuit diagram symbol of the MPSH30 transistor

MPSH30 Transistor Specification

Transistor Code MPSH30
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 0.31W
Collector-Base Voltage (Maximum) VCB 20V
Collector-Emitter Voltage (Maximum) VCE 20V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 135°C
Emitter-Base Voltage (Maximum) VEB 3V
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 300MHz
Collector Capacitance CC 0.65pF

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