MPSH10 NPN Transistor

The MPSH10 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MPSH10 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MPSH10 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MPSH10 transistor as follows.

MPSH10 Transistor Specification

Transistor Code		MPSH10
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.31W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	25V
Collector Current (Maximum)	IC	0.05A
Operating Junction Temperature (Maximum)	TJ	135°C
Emitter-Base Voltage (Maximum)	VEB	3V
Forward Current Transfer Ratio (hFE Value)		60
Transition Frequency	FT	650MHz
Collector Capacitance	CC	0.7pF

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