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MPS8050S NPN Transistor

The MPS8050S is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MPS8050S transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MPS8050S transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MPS8050S transistor as follows.

Circuit diagram symbol of the MPS8050S transistor

MPS8050S Transistor Specification

Transistor Code MPS8050S
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT23
Collector Power Dissipation (Maximum) PC 0.35W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 25V
Collector Current (Maximum) IC 1.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 85
Transition Frequency FT 190MHz
Collector Capacitance CC 9pF

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