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MPQ5136 NPN Transistor

The MPQ5136 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MPQ5136 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MPQ5136 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MPQ5136 transistor as follows.

Circuit diagram symbol of the MPQ5136 transistor

MPQ5136 Transistor Specification

Transistor Code MPQ5136
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO116
Collector Power Dissipation (Maximum) PC 0.22W
Collector-Base Voltage (Maximum) VCB 30V
Collector-Emitter Voltage (Maximum) VCE 20V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 125°C
Emitter-Base Voltage (Maximum) VEB 3V
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 40MHz
Collector Capacitance CC 35pF

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