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MPQ3642 NPN Transistor

The MPQ3642 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MPQ3642 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MPQ3642 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MPQ3642 transistor as follows.

Circuit diagram symbol of the MPQ3642 transistor

MPQ3642 Transistor Specification

Transistor Code MPQ3642
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO116
Collector Power Dissipation (Maximum) PC 0.35W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 45V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 125°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 150MHz
Collector Capacitance CC 8pF

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