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MPQ2369R NPN Transistor

The MPQ2369R is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MPQ2369R transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MPQ2369R transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MPQ2369R transistor as follows.

Circuit diagram symbol of the MPQ2369R transistor

MPQ2369R Transistor Specification

Transistor Code MPQ2369R
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO116
Collector Power Dissipation (Maximum) PC 0.36W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 15V
Collector Current (Maximum) IC 0.2A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 4V
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 500MHz
Collector Capacitance CC 4pF

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