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MPQ1613 NPN Transistor

The MPQ1613 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MPQ1613 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MPQ1613 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MPQ1613 transistor as follows.

Circuit diagram symbol of the MPQ1613 transistor

MPQ1613 Transistor Specification

Transistor Code MPQ1613
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO116
Collector Power Dissipation (Maximum) PC 0.8W
Collector-Base Voltage (Maximum) VCB 75V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 0.6A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 7V
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 80MHz
Collector Capacitance CC 25pF

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