MPQ1000 NPN Transistor

The MPQ1000 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MPQ1000 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MPQ1000 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MPQ1000 transistor as follows.

MPQ1000 Transistor Specification

Transistor Code		MPQ1000
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO116
Collector Power Dissipation (Maximum)	PC	1.25W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	20V
Collector Current (Maximum)	IC	0.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		50
Transition Frequency	FT	175MHz
Collector Capacitance	CC	8pF

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