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MP8212 NPN Transistor

The MP8212 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MP8212 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MP8212 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MP8212 transistor as follows.

Circuit diagram symbol of the MP8212 transistor

MP8212 Transistor Specification

Transistor Code MP8212
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO66
Collector Power Dissipation (Maximum) PC 5W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 60V
Collector Current (Maximum) IC 1.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 7V
Forward Current Transfer Ratio (hFE Value) 50
Transition Frequency FT 100MHz

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