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MO810 PNP Transistor

The MO810 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MO810 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MO810 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MO810 transistor as follows.

Circuit diagram symbol of the MO810 transistor

MO810 Transistor Specification

Transistor Code MO810
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO220
Collector Power Dissipation (Maximum) PC 12W
Collector-Emitter Voltage (Maximum) VCE 30V
Collector Current (Maximum) IC 3A
Operating Junction Temperature (Maximum) TJ 175°C
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 30MHz

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