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MMSS8550W-L PNP Transistor

The MMSS8550W-L is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MMSS8550W-L transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMSS8550W-L transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MMSS8550W-L transistor as follows.

Circuit diagram symbol of the MMSS8550W-L transistor

MMSS8550W-L Transistor Specification

Transistor Code MMSS8550W-L
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT-323
Transistor SMD Code Y2
Collector Power Dissipation (Maximum) PC 0.2W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 25V
Collector Current (Maximum) IC 1.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 120
Transition Frequency FT 100MHz
Collector Capacitance CC 20pF

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