MMSS8550W-H PNP Transistor

The MMSS8550W-H is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MMSS8550W-H transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMSS8550W-H transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MMSS8550W-H transistor as follows.

MMSS8550W-H Transistor Specification

Transistor Code		MMSS8550W-H
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT-323
Transistor SMD Code		Y2
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	25V
Collector Current (Maximum)	IC	1.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		200
Transition Frequency	FT	100MHz
Collector Capacitance	CC	20pF

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