MMSS8050W-J NPN Transistor

The MMSS8050W-J is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMSS8050W-J transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMSS8050W-J transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMSS8050W-J transistor as follows.

MMSS8050W-J Transistor Specification

Transistor Code		MMSS8050W-J
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-323
Transistor SMD Code		Y1
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	25V
Collector Current (Maximum)	IC	1.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		300
Transition Frequency	FT	100MHz
Collector Capacitance	CC	15pF

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