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MMS8050-H NPN Transistor

The MMS8050-H is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMS8050-H transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMS8050-H transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMS8050-H transistor as follows.

Circuit diagram symbol of the MMS8050-H transistor

MMS8050-H Transistor Specification

Transistor Code MMS8050-H
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT-23
Transistor SMD Code J3Y
Collector Power Dissipation (Maximum) PC 0.3W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 25V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 200
Transition Frequency FT 150MHz

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